參數(shù)資料
型號: HAF2012S
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 60V的五(巴西)直| 20A條(?。﹟對263AB
文件頁數(shù): 2/6頁
文件大小: 30K
代理商: HAF2012S
HAF2012(L), HAF2012(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
60
V
Gate to source voltage
16
V
Gate to source voltage
–2.8
V
Drain current
20
A
Drain peak current
Note1
40
A
Body-drain diode reverse drain current
20
A
Channel dissipation
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. Value at Ta = 25
°
C
Tstg
–55 to +150
Typical Operation Characteristics
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Input voltage
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
T
sd
V
OP
3.5
V
1.2
V
Input current
100
μ
A
μ
A
μ
A
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Vi = 1.2V, V
DS
= 0
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Channel temperature
(Gate non shut down)
50
1
Input current
0.8
mA
(Gate shut down)
0.35
mA
Shut down temperature
175
°
C
Gate operation voltage
3.5
13
V
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