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參數(shù)資料
| 型號： | HAF2012 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| 中文描述： | 硅?通道場效應(yīng)晶體管系列電源開關(guān) |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 128K |
| 代理商： | HAF2012 |
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 1 of 9
HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G1139-0400
Rev.4.00
Jul 13, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code:
PRSS0004AE-A
(Package name:
LDPAK (L) )
RENESAS Package code:
PRSS0004AE-B
(Package name:
LDPAK (S)-(1) )
1. Gate
2. Drain
3. Source
4. Drain
123
4
12
3
4
D
S
G
Gate Resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
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| HAL525SO-A | Hall-Effect Switch |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF2012(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| HAF2012-90L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF2012-90STL-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| HAF2012L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Series Power Switching |
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