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參數(shù)資料
| 型號： | HAF2014 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HAF2014 |
HAF2012(L), HAF2012(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
I
D2
V
(BR)DSS
10
—
—
A
V
GS
= 3.5V, V
DS
= 2V
V
GS
= 1.2V, V
DS
= 2V
I
D
= 10mA, V
GS
= 0
Drain current
—
—
10
mA
Drain to source breakdown
voltage
60
—
—
V
Gate to source breakdown
voltage
V
(BR)GSS
16
—
—
V
I
G
= 100
μ
A, V
DS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
–2.8
—
—
V
I
G
= –100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(op)1
I
GS(op)2
I
DSS
—
—
100
μ
A
μ
A
μ
A
μ
A
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
GS
= 1.2V, V
DS
= 0
V
GS
= –2.4V, V
DS
= 0
V
GS
= 8V, V
DS
= 0
V
GS
= 3.5V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
—
—
50
—
—
1
—
—
–100
Input current (shut down)
—
0.8
—
mA
—
0.35
—
mA
Zero gate voltege drain
current
—
—
250
μ
A
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
1.0
—
2.25
V
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 4V
Note3
Static drain to source on state
resistance
—
50
65
m
Static drain to source on state
resistance
R
DS(on)
—
30
43
m
I
D
= 10A, V
GS
= 10V
Note3
Forward transfer admittance
|y
fs
|
Coss
6
12
—
S
I
D
= 10A, V
DS
= 10V
Note3
V
= 10V , V
GS
= 0
f = 1 MHz
Output capacitance
—
630
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
7.5
—
μ
s
μ
s
μ
s
μ
s
I
D
= 5A, V
GS
= 5V
R
L
= 6
Rise time
—
29
—
Turn-off delay time
—
34
—
Fall time
—
26
—
Body–drain diode forward
voltage
—
1.0
—
V
I
F
= 20A, V
GS
= 0
Body–drain diode reverse
recovery time
t
rr
—
110
—
ns
I
= 20A, V
= 0
diF/ dt =50A/
μ
s
Over load shut down
t
os1
t
os2
—
1.8
—
ms
V
GS
= 5V, V
DD
= 12V
V
GS
= 5V, V
DD
= 24V
operation time
Note4
Note:
3. Pulse test
4. Include the junction temperature rise of the over loaded condition.
See characteristic curve of HAF2001.
—
0.7
—
ms
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