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參數(shù)資料
| 型號： | HAF2015RJ |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HAF2015RJ |
HAF2012(L), HAF2012(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
60
V
Gate to source voltage
16
V
Gate to source voltage
–2.8
V
Drain current
20
A
Drain peak current
Note1
40
A
Body-drain diode reverse drain current
20
A
Channel dissipation
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Ta = 25
°
C
Tstg
–55 to +150
Typical Operation Characteristics
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Input voltage
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
T
sd
V
OP
3.5
—
—
V
—
—
1.2
V
Input current
—
—
100
μ
A
μ
A
μ
A
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Vi = 1.2V, V
DS
= 0
Vi = 8V, V
DS
= 0
Vi = 3.5V, V
DS
= 0
Channel temperature
(Gate non shut down)
—
—
50
—
—
1
Input current
—
0.8
—
mA
(Gate shut down)
—
0.35
—
mA
Shut down temperature
—
175
—
°
C
Gate operation voltage
3.5
—
13
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAF2017 | Datasheet|ADE-208-1637|MAR.01.03|124K |
| HAF2012 | Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| HAL525SF-C | Industrial Control IC |
| HAL525SO-A | Hall-Effect Switch |
| HAL525SO-C | Hall-Effect Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF2015RJ-EL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching |
| HAF2017 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Datasheet|ADE-208-1637|MAR.01.03|124K |
| HAF2017-90L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOSFET Power Switching |
| HAF2017-90L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) DPAK(L)-(2) Sack |
| HAF2017-90S | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOSFET Power Switching |
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