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參數(shù)資料
| 型號： | HAT2016R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 53K |
| 代理商： | HAT2016R |
HAT2016R
6
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
0.2
0.5
1
2
5
10
20
500
200
100
20
50
10
5
di/dt = 20 A/
μ
s
V = 0, Ta = 25
°
C
0
10
20
30
40
50
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V = 0
f = 1 MHz
50
40
30
20
10
0
20
16
12
8
4
8
16
24
32
40
0
V
GS
V
DS
V = 5 V
10 V
25 V
V = 25 V
10 V
5 V
I = 6.5 A
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Souece to Drain Voltage
20
16
12
8
4
0
0.4
0.8
1.2
1.6
2.0
V = 0, –5 V
5 V
Pulse Test
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| HAT2019R | Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2020R | Silicon N Channel Power MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2016R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2019R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2020R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2020R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2022R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
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