參數(shù)資料
型號(hào): HAT2024R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 2/10頁(yè)
文件大小: 54K
代理商: HAT2024R
HAT2024R
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
30
V
Gate to source voltage
±
20
V
Drain current
5.5
A
Drain peak current
44
A
Body to drain diode reverse drain
current
5.5
A
Channel dissipation
Pch*
2
2
W
Channel dissipation
Pch
*
3
3
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Tstg
–55 to +150
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