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參數(shù)資料
| 型號： | HAT2024R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道功率MOS FET的高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 54K |
| 代理商： | HAT2024R |
HAT2024R
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
Zero gate voltege drain
current
—
—
10
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
V
DS
= 10V,
I
D
= 1mA
I
D
= 3A, V
GS
= 10V*
1
I
D
= 3A, V
GS
= 4V*
1
I
D
= 3A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
Static drain to source on state R
DS(on)
resistance
—
0.05
0.065
R
DS(on)
|y
fs
|
Ciss
—
0.078
0.11
Forward transfer admittance
3.5
5.5
—
S
Input capacitance
—
310
—
pF
Output capacitance
Coss
—
220
—
pF
Reverse transfer capacitance Crss
—
100
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
17
—
ns
V
GS
= 4V, I
D
= 3A
V
DD
10V
Rise time
—
190
—
ns
Turn-off delay time
—
25
—
ns
Fall time
—
60
—
ns
Body to drain diode forward
voltage
—
0.9
1.4
V
IF = 5.5A, V
GS
= 0*
1
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
50
—
ns
IF = 5.5A, V
GS
= 0
diF/ dt =20A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2024REL | 制造商:HITACHI 功能描述:* 制造商:Hitachi 功能描述:5.5 A, 30 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| HAT2024R-EL | 制造商:HITACHI 功能描述: |
| HAT2024R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2025R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2025R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
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