- 您現在的位置：買賣IC網 > PDF目錄370427 > HAT2054M (Hitachi,Ltd.) Silicon N Channel Power MOS FET Power Switching PDF資料下載
參數資料
| 型號： | HAT2054M |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應管電源開關 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 27K |
| 代理商： | HAT2054M |
HAT2053M
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
*
2
I
D(pulse)
*
1
I
DR
*
2
Pch
(pulse)
*
2
Pch
(continuous)
*
3
Tch
20
V
Gate to source voltage
±
12
V
Drain current
6.1
A
Drain peak current
24.4
A
Body-drain diode reverse drain current
6.1
A
Channel dissipation
2.0
W
1.05
W
Channel temperature
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW
≤
5s,Ta=25
°
C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
20
—
—
V
I
D
= 10mA, V
GS
= 0
V
GS
=
±
12V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
V
DS
= 10V,
I
D
= 1mA
I
D
= 3A, V
GS
= 4.5V *
1
I
D
= 3A, V
GS
= 2.5V
*
1
I
D
= 3A, V
DS
= 10V
*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
0.1
μ
A
μ
A
Zero gate voltege drain current
—
—
1
Gate to source cutoff voltage
0.4
—
1.4
V
Static drain to source on state
—
28
33
m
m
resistance
—
37
48
Forward transfer admittance
6.5
11
—
S
Input capacitance
—
570
—
pF
Output capacitance
Coss
—
220
—
pF
Reverse transfer capacitance
Crss
—
160
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
15
—
ns
V
GS
= 4.5V, I
D
= 3A
R
L
= 3.3
Rise time
—
100
—
ns
Turn-off delay time
—
90
—
ns
Fall time
—
105
—
ns
Body–drain diode forward voltage
—
0.95
—
V
IF = 6.1A, V
GS
= 0
*
1
IF = 6.1A, V
GS
= 0
diF/ dt =20A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
(50)
—
ns
相關PDF資料 |
PDF描述 |
|---|---|
| HAT2064R | Silicon N Channel Power MOS FET Power Switching |
| HAT3004R | Silicon N Channel / P Channel Power MOS FET High Speed Power Switching( N/ P 溝道功率 MOSFET) |
| HAT3006R | Silicon N Channel / P Channel Power MOS FET(N/P溝道MOEFET) |
| HAT3008R | Silicon N/P Channel Power MOS FET High Speed Power Switching |
| HAT3008RJ | Silicon N/P Channel Power MOS FET High Speed Power Switching |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HAT2054M-EL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAT2057RA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Datasheet|ADE-208-1636|FEB.18.03|45K |
| HAT2058R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
| HAT2058R/HAT2058RJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HAT2058R_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET High Speed Power Switching |
發(fā)布緊急采購，3分鐘左右您將得到回復。