參數(shù)資料
型號: HAT3006R
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel / P Channel Power MOS FET(N/P溝道MOEFET)
中文描述: 硅?頻道/ P通道功率MOS FET(N / P系列溝道MOEFET)
文件頁數(shù): 1/14頁
文件大?。?/td> 234K
代理商: HAT3006R
HAT3006R
Silicon N Channel / P Channel Power MOS FET
High Speed Power Switching
ADE-208-480 F (Z)
7th. Edition
February 1999
Features
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
Outline
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
DR
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Ratings
Nch
30
±
20
6.5
52
6.5
Unit
V
V
A
A
A
Pch
– 30
±
20
– 4.5
– 36
– 4.5
SOP–8
1234
5
6
7
8
G
D
S
D
G
D
S
D
Nch
Pch
1
2
7 8
4
5 6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
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