參數(shù)資料
型號: HAT2058RJ
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 4/10頁
文件大?。?/td> 76K
代理商: HAT2058RJ
HAT2058R/HAT2058RJ
4
Main Characteristics
4.0
3.0
2.0
1.0
0
50
100
150
200
10
8
6
4
2
0
1
2
3
4
5
20
16
12
8
0
2
4
6
8
10
V = 2.0 V
6 V
4.0 V
Tc = 75
°
C
25
°
C
-25
°
C
10 V
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
Drain to Source Voltage V
DS
(V)
1
3
10
30
100
100
30
100
μ
s
10
μ
s
4
C
Ambient Temperature Ta (
°
C)
Power vs. Temperature Derating
Test condition :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), PW < 10 s
D
D
Maximum Safe Operation Area
Operation in
this area is
limited by R
DS(on)
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
V = 10 V
Pulse Test
2DieOeain
1DiveOpeaion
Ta = 25
°
C
1 shot Pulse
1 Drive Operation
Note 6:
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
DCOpeaion(PW<10s
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