參數(shù)資料
型號: HAT2058RJ
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開關
文件頁數(shù): 8/10頁
文件大小: 76K
代理商: HAT2058RJ
HAT2058R/HAT2058RJ
8
10
μ
100
μ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
DM
P
PW
T
D =T
ch-f(t) = s (t) ch - f
ch-f = 125
°
C/W, Ta = 25
°
C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
θ
θ
10
μ
100
μ
1 m
10 m
100 m
1
10
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
DM
P
PW
T
D =PW
T
ch-f(t) = s (t) ch - f
ch-f = 166
°
C/W, Ta = 25
°
C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
θ
θ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Pulse Width PW (S)
N
γ
Pulse Width PW (S)
N
γ
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