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參數(shù)資料
| 型號： | HAT2195R |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 92K |
| 代理商： | HAT2195R |
HAT2195R
Rev.3.00, Apr.01.2004, page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.0
—
—
25
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.6
5.8
42
3400
785
250
1.0
23
10
5.5
12
16
50
6.5
0.80
32
Max
—
± 0.1
1
2.5
5.8
8.4
—
—
—
—
—
—
—
—
—
—
—
—
1.04
—
Unit
V
μ
A
μ
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 9 A, V
GS
= 10 V
Note4
I
D
= 9 A, V
GS
= 4.5 V
Note4
I
D
= 9 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 18 A
V
GS
= 10 V, I
D
= 9 A
V
DD
10 V
R
L
= 1.11
Rg = 4.7
IF = 18 A, V
GS
= 0
Note4
IF = 18 A, V
GS
= 0
diF/ dt = 100 A/ μs
Main Characteristics
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
4.0
3.0
2.0
1.0
0
50
100
150
200
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
500
Ta = 25 °C
1 shot Pulse
PW = 10 ms
10 μs
100 μs
Operation in
this area is
limited by R
DS(on)
Note 5
DC Operaton (PW < 10 s)
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| HAT2195R-EL-E | 功能描述:MOSFET N-CH 30V 18A 8-SOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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| HAT2196C | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Power Switching |
| HAT2196C-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Power Switching |
| HAT2197R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 30V 16A 8SOP - Tape and Reel |
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