參數(shù)資料
型號(hào): HAT2198R-EL-E
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel Power MOS FET Power Switching
中文描述: 硅?通道功率MOS場效應(yīng)管電源開關(guān)
文件頁數(shù): 7/8頁
文件大?。?/td> 125K
代理商: HAT2198R-EL-E
HAT2198R
Rev.2.00, Oct.18.2004, page 7 of 7
Package Dimensions
Package Code
JEDEC
JEITA
Mass
(reference value)
FP-8DA
Conforms
0.085 g
*Dimension including the plating thickness
Base material dimension
1
4.90
5.3 Max
0.25
0.15
0 – 8
M
8
5
1
4
1.27
3
0.40 ± 0.06
*0.42 ± 0.08
0.75 Max
0
+
0
*
0.60
+ 0.67
6.10
+ 0.10
1.08
As of January, 2003
Unit: mm
Ordering Information
Part Name
Quantity
Shipping Container
HAT2198R-EL-E
Note:
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
2500 pcs
Taping
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HAT2199R-EL-E 功能描述:MOSFET N-CH 30V 11A 8SOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
HAT2200R 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 100V 8A 8SOP - Tape and Reel
HAT2200R-EL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching