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參數(shù)資料
| 型號： | HAT2220R-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 84K |
| 代理商： | HAT2220R-EL-E |
REJ03G1572-0500 Rev.5.00 Jul 20, 2007
Page 1 of 3
HAT2220R
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1572-0500
Rev.5.00
Jul 20, 2007
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
1234
5
6
7
8
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
Pch
Note4
Pch
Note5
Tch
Tstg
Ratings
450
±
30
0.7
2.1
0.7
0.7
2
3
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
1 s
2. PW
≤
10
μ
s, duty cycle
≤
1%
3. STch = 25
°
C, Tch
≤
150
°
C
4. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
5. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
Note1
Note2
Note3
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HAT2221C | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Power Switching |
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| HAT2226R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| HAT2226R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| HAT2240C | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Power Switching |
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