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參數(shù)資料
| 型號： | HAT3006R |
| 英文描述： | TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 6.5A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|一對|互補| 30V的五（巴西）直| 6.5AI（四）|蘇 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 61K |
| 代理商： | HAT3006R |
Table 2 Electrical Characteristics P Channel
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
V
(BR)DSS
–30
voltage
———————————————————————————————————————————
Gate to source breakdown
V
(BR)GSS
±10
voltage
———————————————————————————————————————————
Gate to source leak current
I
GSS
—
———————————————————————————————————————————
Zero gate voltage drain current
I
DSS
—
———————————————————————————————————————————
Gate to source cutoff voltage
V
GS(off)
–0.5
———————————————————————————————————————————
Static drain to source on state
R
DS(on)
—
resistance
————————————————————————
—
Symbol
Min
Typ
Max
Unit
Test conditions
—
—
V
I
D
= –10 mA, V
GS
= 0
—
—
V
I
G
= ±200 μA, V
DS
= 0
—
±10
μA
V
GS
= ±6.5 V, V
DS
= 0
—
–10
μA
V
DS
= –30 V, V
GS
= 0
—
–1.5
V
VDS= –10 V, I
D
= –1 mA
0.12
0.16
I
D
= –2 A
V
GS
= –4 V *
0.17
0.24
I
D
= –2 A
V
GS
= –2.5 V *
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
3.0
5.0
—
S
I
D
= –2 A
V
DS
= –10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
————————————————————————————————
Output capacitance
Coss
—
————————————————————————————————
Reverse transfer capacitance
Crss
—
———————————————————————————————————————————
Turn–on delay time
td(
on)
—
————————————————————————————————
Rise time
tr
—
————————————————————————————————
Turn–off delay time
td(
off)
—
————————————————————————————————
Fall time
tf
—
———————————————————————————————————————————
Body–drain diode forward
V
DF
—
voltage
———————————————————————————————————————————
Body–drain diode reverse
trr
—
recovery time
———————————————————————————————————————————
* Pulse Test
720
—
pF
V
DS
= –10 V
345
—
pF
V
GS
= 0
115
—
pF
f = 1 MHz
16
—
ns
V
GS
= –4 V, I
D
= –2 A
100
—
ns
V
DD
= –10 V
120
—
ns
100
—
ns
–0.9
—
V
I
F
= –2.5 A, V
GS
= 0
100
—
ns
I
F
= –2.5 A, V
GS
= 0
diF / dt = 20A / μs
HAT3001F
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