參數(shù)資料
型號(hào)： HAT3010R
文件頁數(shù)： 1/11頁
文件大小： 61K
代理商： HAT3010R
Application
Power switching
Features
Low on–resistance
Capable of 2.5V gate drive
Low drive current
High density mounting
Ordering Information
————————————————————
Hitachi Cord
————————————————————
EIAJ Cord
————————————————————
JEDEC Cord
————————————————————
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
FP–8D
SC–527–8A
—
Ratings
————————
Nch
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Channel dissipation
Pch***
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
≤
10 μs, duty cycle
≤
1 %
**
1 Drive operation
When using the glass epoxy board (40
x
40
x
1.6 mm)
***
2 Drive operation
When using the glass epoxy board (40
x
40
x
1.6 mm)
Symbol
Pch
Unit
30
–30
V
±10
±10
V
2.5
–2.5
A
10
–10
A
1.5
W
1
W
150
°C
–55 to +150
°C
1234
5
6
7
8
SOP–8
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
G
D
S
D
G
D
S
D
MOS1
MOS2
1
2
7 8
4
5 6
3
HAT3001F
Silicon N Channel / P Channel Complementary Power MOS FET
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