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參數(shù)資料
| 型號： | HAT3021R-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N/P Channel Power MOS FET Power Switching |
| 中文描述： | 硅N / P系列頻道功率MOS場效應管電源開關 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 150K |
| 代理商： | HAT3021R-EL-E |
HAT3021R
Rev.2.00, Oct.06.2004, page 5 of 10
0.01
0.03 0.1
0.3
1
3
10
100
10
30
3
1
0.3
0.1
0.03
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
V
DS
= 10 V
Pulse Test
25
°
C
Tc = –25
°
C
75
°
C
Case Temperature Tc (
°
C)
S
D
)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150
100
50
-25
0
25
50
75
100 125
150
0
I
D
= 0.5 A, 1 A, 2 A
0.5 A, 1 A, 2 A
V
GS
= 4.5 V
10 V
1
3
10
100
10
20
50
0
10
20
40
50
30
200
500
1000
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
2
4
6
8
10
0
20
50
10
2
1
0.1
5
0.2
1
2
10
2
5
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
V
DD
= 50 V
25 V
10 V
I
D
= 3.4 A
V
DS
V
GS
tr
td(on)
td(off)
Reverse Drain Current I
DR
(A)
R
Body-Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
D
D
G
G
Dynamic Input Characteristics
Drain Current I
D
(A)
S
Switching Characteristics
tf
V
GS
= 10 V, V
DD
= 30 V
Rg = 4.7
, duty
≤
1 %
0.5
5
100
di / dt = 100 A /
μ
s
V
GS
= 0, Ta = 25
°
C
V
DD
= 50 V
25 V
10 V
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相關代理商/技術參數(shù) |
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