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參數(shù)資料
| 型號(hào)： | HAT3021R-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N/P Channel Power MOS FET Power Switching |
| 中文描述： | 硅N / P系列頻道功率MOS場(chǎng)效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 150K |
| 代理商： | HAT3021R-EL-E |
HAT3021R
Rev.2.00, Oct.06.2004, page 8 of 10
0
–0.03 –0.1 –0.3
–1
–3
–10
5
10
1
2
0.2
0.5
0.1
0.02
0.05
0.01
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
V
DS
= 10 V
Pulse Test
25
°
C
Tc = –25
°
C
75
°
C
Case Temperature Tc (
°
C)
S
D
)
Static Drain to Source on State Resistance
vs. Temperature
500
Pulse Test
400
300
200
100
-25
0
25
50
75
100 125
150
0
–0.5 A, –1 A, –2 A
V
GS
= 4.5 V
10 V
–2 A
–0.1
–0.3
–1
–3
–10
100
20
50
10
0
–10
–20
–40
–50
–30
2000
5000
10000
1000
100
200
500
0
–20
–40
–60
–80
–100
0
0
–4
–8
–12
–16
–20
20
4
Gate Charge Qg (nC)
8
12
16
20
50
10
2
1
–0.1
5
–1
–10
20
50
10
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= –2.6 A
V
DS
V
GS
tr
td(on)
td(off)
Reverse Drain Current I
DR
(A)
R
Body-Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
D
D
G
G
Dynamic Input Characteristics
Drain Current I
D
(A)
S
Switching Characteristics
tf
V
GS
= –10 V, V
DS
= –30 V
Rg = 4.7
, duty
≤
1 %
100
di / dt = –100 A /
μ
s
V
GS
= 0, Ta = 25
°
C
V
DD
= –50 V
–25 V
–10 V
I
D
= –0.5 A, –1 A
V
DD
= –50 V
–25 V
–10 V
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| HAT3029R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N/P Channel Power MOS FET Power Switching |
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