參數(shù)資料
型號(hào): HCS244HMSR
廠商: HARRIS SEMICONDUCTOR
元件分類: 通用總線功能
英文描述: Radiation Hardened Octal Buffer/Line Driver, Three-State
中文描述: HC/UH SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, UUC16
文件頁數(shù): 5/10頁
文件大?。?/td> 173K
代理商: HCS244HMSR
316
Specifications HCS244MS
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50
μ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or 5.5V, VCC = 5.5V
+25
o
C
-
±
50
μ
A
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
+25
o
C
-
-
-
Propagation Delay Data
to Output
TPLH,
TPHL
VCC = 4.5V
+25
o
C
2
25
ns
Enable to Output
TPZL
VCC = 4.5V
+25
o
C
2
30
ns
Enable to Output
TPZH
VCC = 4.5V
+25
o
C
2
24
ns
Disable to Output
TPLZ,
TPHZ
VCC = 4.5V
+25
o
C
2
30
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO
4.0V is recognized as a logic “1”, and VO
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
μ
A
IOL/IOH
5
-15% of 0 Hour
IOZL/IOZH
5
±
200nA
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Spec Number
518763
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