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參數(shù)資料
| 型號(hào)： | HCTS193MS |
| 廠商： | Intersil Corporation |
| 元件分類： | 通用總線功能 |
| 英文描述： | Radiation Hardened Synchronous 4-Bit Up/Down Counter |
| 中文描述： | 同步輻射加固4位加/減計(jì)數(shù)器 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 158K |
| 代理商： | HCTS193MS |
600
HCTS193MS
Die Characteristics
DIE DIMENSIONS:
104 x 86 mils
METALLIZATION:
Type: AlSi
Metal Thickness: 11k
±
1k
GLASSIVATION:
Type: SiO
2
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
< 2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
μ
m x 100
μ
m
4 mils x 4 mils
Metallization Mask Layout
HCTS193MS
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS193 is TA14451A.
P1
(1)
Q1
(2)
Q0(3)
GND
(8)
P3
(9)
(15) P0
VCC
(16)
P2
(10)
CPD(4)
CPU(5)
Q2(6)
Q3(7)
(14) MR
(13) TCD
(12) TCU
(11) PL
Spec Number
518620
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HCTS193HMSR | Radiation Hardened Synchronous 4-Bit Up/Down Counter |
| HCTS20KMSR | Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20D | Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20DMSR | 16-Bit D-type Edge-Triggered Flip-Flops With 3-State Outputs 48-CFP -55 to 125 |
| HCTS20HMSR | Radiation Hardened Dual 4-Input NAND Gate |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HCTS20D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20D/SAMPLE | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20DMSR | 制造商:Intersil Corporation 功能描述:RAD HARD DUAL 4-INPUT NAND GATE,DIP,200KRAD,TTL,CLASS V - Rail/Tube |
| HCTS20HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
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