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參數(shù)資料
| 型號： | HCTS20D |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened Dual 4-Input NAND Gate |
| 中文描述： | 輻射加固雙路4輸入與非門 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大?。?/td> | 132K |
| 代理商： | HCTS20D |
427
HCTS20MS
Die Characteristics
DIE DIMENSIONS:
2.20 x 2.24(mm)
METALLIZATION:
Type: SiAl
Metal Thickness: 11k
±
1k
GLASSIVATION:
Type: SiO
2
Thickness: 13k
±
2.6k
WORST CASE CURRENT DENSITY:
<2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
μ
m x 100
μ
m
4 mils x 4 mils
Metallization Mask Layout
HCTS20MS
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS20 is TA14426A.
A1
(1)
VCC
(14)
D2
(13)
B1 (2)
NC (3)
C1 (4)
D1 (5)
(6)
Y1
(7)
GND
(8)
Y2
(9) A2
(10) B2
(11) NC
(12) C2
Spec Number
518619
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HCTS20DMSR | 16-Bit D-type Edge-Triggered Flip-Flops With 3-State Outputs 48-CFP -55 to 125 |
| HCTS20HMSR | Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20K | Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20MS | Octal Buffers/Drivers With 3-State Outputs 20-LCCC -55 to 125 |
| HCTS244KMSR | Radiation Hardened Octal Buffer/Line Driver, Three-State |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HCTS20D/SAMPLE | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20DMSR | 制造商:Intersil Corporation 功能描述:RAD HARD DUAL 4-INPUT NAND GATE,DIP,200KRAD,TTL,CLASS V - Rail/Tube |
| HCTS20HMSR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20K | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
| HCTS20K/SAMPLE | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened Dual 4-Input NAND Gate |
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