參數(shù)資料
型號: HCTS299K
廠商: Intersil Corporation
英文描述: Radiation Hardened 8-Bit Universal Shift Register; Three-State
中文描述: 輻射加固8位通用移位寄存器,三態(tài)
文件頁數(shù): 6/13頁
文件大小: 118K
代理商: HCTS299K
629
Specifications HCTS299MS
Setup Time S1, S0
to CLK
TSU
VCC = 4.5V
1
+25
o
C
27
-
ns
1
+125
o
C, -55
o
C
41
-
ns
Hold Time DS0,
DS7, I/On, S0, S1 to
CLK
TH
VCC = 4.5V
1
+25
o
C
0
-
ns
1
+125
o
C, -55
o
C
0
-
ns
Recovery Time MR
to CLK
TREC
VCC = 4.5V
1
+25
o
C
5
-
ns
1
+125
o
C, -55
o
C
5
-
ns
Pulse Width MR
TW (MR)
VCC = 4.5V
1
+25
o
C
15
-
ns
1
+125
o
C, -55
o
C
22
-
ns
Pulse Width CLK
TW (CLK)
VCC = 4.5V
1
+25
o
C
20
-
ns
1
+125
o
C, -55
o
C
30
-
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V or 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50
μ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V or 5.5V, VIH =VCC/2,
VIL = 0.8V, IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
μ
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC, VCC = 5.5V
+25
o
C
-
±
50
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
+25
o
C
-
-
-
CLK to I/On
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
32
ns
CLK to Q0, Q7
TPHL,
TPLH
VCC = 4.5V
+25
o
C
2
34
ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
518640
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