參數(shù)資料
型號(hào): HE7601SG
廠商: Hitachi,Ltd.
英文描述: GaAlAs Infrared Emitting Diode(GaAlAs紅外發(fā)射二極管)
中文描述: 發(fā)動(dòng)器紅外線發(fā)光二極管(紅外發(fā)射二極管的GaAIAs)
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 20K
代理商: HE7601SG
HE7601SG
2
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Symbol
Min
Typ
Max
Units
Test Conditions
Optical output power
P
O
λ
p
λ
V
F
I
R
Ct
30
mW
I
F
= 200 mA
I
F
= 200 mA
I
F
= 200 mA
I
F
= 200 mA
V
R
= 3 V
V
R
= 0 V, f = 1 MHz
I
F
= 50 mA
Peak wavelength
740
770
800
nm
Spectral width
50
nm
Forward voltage
2.5
V
Reverse current
100
μA
Capacitance
30
pF
Rise and fall time
tr, tf
10
ns
Typical Characteristic Curves
50
40
30
20
10
0
0
50
Forward current, I (mA)
100
150
200
250
T =
20
°
C
O
40
°
C
0
°
C
25
°
C
60
°
C
o
Optical Output Power vs. Forward Current
250
200
150
100
50
0
0
0.5
Forward voltage, V (V)
1.0
1.5
2.0
2.5
25
°
C
60
°
C
F
F
T =
20
°
C
Forward Current vs. Forward Voltage
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