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參數(shù)資料
| 型號(hào)： | HGT1S14N41G3VLS |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| 中文描述： | 晶體管| IGBT的|正陳| 445V五（巴西）國際消費(fèi)電子展| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | HGT1S14N41G3VLS |
3
Gate to Emitter Leakage Current
I
GES
BV
GES
t
d(ON)I
V
GE
=
±
10V
I
GES
=
±
5mA
V
DD
= 14V, R
G
= 1k
,
V
GE
= 5V (Figure 14)
±
384
±
12
±
555
±
14
±
1000
μ
A
Gate to Emitter Breakdown Voltage
-
V
Current Turn-On Delay Time -
Resistive Load
I
C
= 11.5A, T
J
= 25
o
C
I
C
= 6.5A, T
J
= 150
o
C
I
C
= 11.5A, T
J
= 25
o
C
I
C
= 6.5A, T
J
= 150
o
C
-
0.9
1.5
μ
s
μ
s
μ
s
μ
s
μ
s
-
0.75
1.6
Current Turn-On Rise Time -
Resistive Load
t
rI
V
DD
= 14V, R
G
= 1k
,
V
GE
= 5V (Figure 14)
-
3.2
4.5
-
2.7
3.8
Current Turn-Off Time - Inductive Load
t
d(OFF)I
+ t
fI
I
C
= 6.5A, R
G
= 1k
,
V
GE
= 5V, L = 300
μ
H,
V
DD
= 300V, T
J
= 150
o
C (Figure 14)
I
C
= 6.5A, R
G
= 1k
,
V
GE
= 5V, R
L
= 46
,
V
DD
= 300V, T
J
o
C (Figure 14)
L = 3mH, V
G
= 5V,
R
G
= 1k
(Figures 1, 2)
-
9
20
Current Turn-Off Time - Resistive Load
t
d(OFF)I
+ t
fI
-
10
15
μ
s
Inductive Use Test
I
SCIS
T
C
= 150
o
C
T
C
= 25
o
C
11.5
-
-
A
15
-
-
A
Thermal Resistance
R
θ
JC
(Figure 18)
-
-
1.1
o
C/W
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs TIME IN AVALANCHE
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs. INDUCTANCE
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
12
4
44
20
I
S
,
40
160
200
120
80
t
AV
, TIME IN AVALANCHE (
μ
s)
28
36
52
60
T
J
= 150
o
C
T
J
= 25
o
C
R
G
= 1k
, V
GE
= 5V
I
SCIS
CAN BE LIMITED BY gfs AT V
GE
= 5V
L, INDUCTANCE (mH)
24
0
I
S
,
8
6
8
4
2
10
0
32
16
40
T
J
= 25
o
C
T
J
= 150
o
C
R
G
= 1k
, V
GE
= 5V
I
SCIS
CAN BE LIMITED BY gfs AT V
GE
= 5V
T
J
, JUNCTION TEMPERATURE (
o
C)
1.0
1.2
1.3
V
C
,
-50
25
100
175
1.1
V
GE
= 3.7V
V
GE
= 4.0V
I
CE
= 6A
V
GE
= 5.0V
V
GE
= 4.5V
T
J
, JUNCTION TEMPERATURE (
o
C)
-50
25
100
175
1.42
1.34
1.62
1.38
1.46
1.54
V
C
,
1.50
1.58
I
CE
= 10A
V
GE
= 3.7V
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
HGT1S14N41G3VLS, HGTP14N41G3VL
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|---|---|
| HGTP14N41G3VL | TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| HGT1S14N41G3VLS | 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 410V N溝道,邏輯電平,電壓箝位IGBTs) |
| HGTP14N41G3VL | 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 410V N溝道,邏輯電平,電壓箝位IGBTs) |
| HGT1S20N35G3VLS | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGT1S20N35G3VL | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
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