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參數(shù)資料
| 型號： | HGT1S14N41G3VLS |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| 中文描述： | 晶體管| IGBT的|正陳| 445V五（巴西）國際消費電子展| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 146K |
| 代理商： | HGT1S14N41G3VLS |
6
FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE
FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
R
G
, GATE SERIES RESISTANCE (k
)
B
C
,
4
380
376
412
392
404
2
6
8
10
0
384
388
396
400
408
T
J
(
o
C)
-55
25
150
175
I
CER
= 10mA
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
-4
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
Test Circuit and Waveforms
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 20. t
ON
AND t
OFF
SWITCHING TEST CIRCUIT
R
G
G
C
E
V
DD
3mH
PULSE
GEN
DUT
R
G
= 1k
+
-
V
DD
DUT
5V
C
G
E
LOAD
R
or
L
HGT1S14N41G3VLS, HGTP14N41G3VL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP14N41G3VL | TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB |
| HGT1S14N41G3VLS | 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 410V N溝道,邏輯電平,電壓箝位IGBTs) |
| HGTP14N41G3VL | 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 410V N溝道,邏輯電平,電壓箝位IGBTs) |
| HGT1S20N35G3VLS | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGT1S20N35G3VL | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S14N41G3VLS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 395V V(BR)CES | 18A I(C) | TO-263AB |
| HGT1S14N41G3VLT | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S15N120C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S15N120C3S | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGT1S1N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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