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參數(shù)資料
| 型號： | HGT1S3N60B3S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 7A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 7 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 141K |
| 代理商： | HGT1S3N60B3S |
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2
t
d
,
4
6
8
1
100
150
175
250
225
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V
7
5
3
75
125
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
2
4
6
8
1
60
80
100
120
140
R
G
= 82
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
7
5
3
I
C
,
0
5
10
15
20
25
5
7
8
9
10
6
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
T
C
= 25
o
C
PULSE DURATION = 250
μ
s
11
12
13
14
15
30
T
C
= -55
o
C
Q
g
, GATE CHARGE (nC)
20
0
12
15
9
6
3
0
10
5
15
25
V
G
,
I
g(REF)
= 1mA, R
L
= 171
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
C
RES
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
5
10
15
20
25
0
100
C
C
IES
C
OES
FREQUENCY = 1MHz
200
300
400
500
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB |
| HGT1S3N60C3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S3N60C3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S3N60C3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB |
| HGT1S5N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
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