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參數(shù)資料
| 型號： | HGT1S3N60B3S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 7A, 600V, UFS Series N-Channel IGBTs |
| 中文描述： | 7 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 141K |
| 代理商： | HGT1S3N60B3S |
6
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 18. SWITCHING TEST WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
J
,
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.05
0.2
0.1
0.02
0.01
R
G
= 82
L = 1mH
V
DD
= 480V
+
-
RHRD460
t
fI
t
d(OFF)I
t
fI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTD3N60C3S | 6A, 600V, UFS Series N-Channel IGBTs |
| HGTP3N60C3 | 6A, 600V, UFS Series N-Channel IGBTs(6A, 600V, UFS系列N溝道絕緣柵雙極型晶體管) |
| HGTD3N60C3S9A | 6A, 600V, UFS Series N-Channel IGBTs |
| HGTD3N60C3S | 6A, 600V, UFS Series N-Channel IGBTs |
| HGTD8P50G1S | 8A, 500V P-Channel IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60B3S9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB |
| HGT1S3N60C3D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S3N60C3DS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGT1S3N60C3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB |
| HGT1S5N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
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