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參數(shù)資料
| 型號： | HGTP20N60A4_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBTs |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-220AB ALTERNATE VERSION, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 140K |
| 代理商： | HGTP20N60A4_NL |
2001 Fairchild Semiconductor Corporation
HGTG20N60A4, HGTP20N60A4 Rev. B
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 125
oC
ICE = 20A
VCE = 390V
VGE = 15V
RG = 3
L = 500
H
Test Circuit (Figure 20)
-15
21
ns
Current Rise Time
trI
-13
18
ns
Current Turn-Off Delay Time
td(OFF)I
-
105
135
ns
Current Fall Time
tfI
-55
73
ns
Turn-On Energy (Note 3)
EON1
-
115
-
J
Turn-On Energy (Note 3)
EON2
-
510
600
J
Turn-Off Energy (Note 2)
EOFF
-
330
500
J
Thermal Resistance Junction To Case
RθJC
-
0.43
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
TC, CASE TEMPERATURE (
oC)
I CE
,DC
CO
L
ECT
O
R
C
URRENT
(
A
)
50
20
0
80
40
60
25
75
100
125
150
100
VGE = 15V
PACKAGE LIMIT
DIE CAPABILITY
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
60
0
I CE
,CO
L
ECT
O
R
T
O
EM
IT
T
E
R
CURRENT
(
A
)
20
300
400
200
100
500
600
0
80
100
40
120
TJ = 150
oC, R
G = 3, VGE = 15V, L = 100H
f MA
X
,
OPERA
T
ING
F
R
EQUENCY
(
k
Hz)
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
300
50
10
20
500
TJ = 125
oC, R
G = 3, L = 500H, V CE = 390V
100
40
30
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RJC = 0.43
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TC
VGE
15V
75oC
VGE, GATE TO EMITTER VOLTAGE (V)
I SC
,PEAK
SHO
R
T
CIR
CUIT
CURRENT
(
A
)
t SC
,SHO
R
T
CIR
CUIT
WIT
H
ST
AND
T
IM
E
(
s)
10
11
12
15
0
2
10
100
250
350
450
14
13
14
4
6
8
12
150
200
300
400
VCE = 390V, RG = 3, TJ = 125
oC
tSC
ISC
HGTG20N60A4, HGTP20N60A4
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