- 您現在的位置：買賣IC網 > PDF目錄371822 > HIP6604B (Intersil Corporation) FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN PDF資料下載
參數資料
| 型號： | HIP6604B |
| 廠商： | Intersil Corporation |
| 元件分類： | FPGA |
| 英文描述： | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 同步整流降壓MOSFET驅動器 |
| 文件頁數： | 4/11頁 |
| 文件大?。?/td> | 346K |
| 代理商： | HIP6604B |
4
FN9072.7
July 20, 2005
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT
- V
PHASE
) . . . . . . . . . . . . . . . . . . . . . . .15V
Input Voltage (V
PWM
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE. . . . . . .V
PHASE
- 5V(<400ns pulse width) to V
BOOT
+ 0.3V
. . . . . . . . . . . .V
PHASE
-0.3V(>400ns pulse width) to V
BOOT
+ 0.3V
LGATE. . . . . . . . . GND - 5V(<400ns pulse width) to V
PVCC
+ 0.3V
. . . . . . . . . . . . . . GND -0.3V(>400ns pulse width) to V
PVCC
+ 0.3V
PHASE. . . . . . . . . . . . . . . . . . GND -5V(<400ns pulse width) to 15V
. . . . . . . . . . . . . . . . . . . . . . .GND -0.3V(>400ns pulse width) to 15V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . .200V
Thermal Information
Thermal Resistance
SOIC Package (Note 1) . . . . . . . . . . . .
EPSOIC Package (Note 2). . . . . . . . . .
QFN Package (Note 2). . . . . . . . . . . . .
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
°
C
Maximum Storage Temperature Range . . . . . . . . . .-65
°
C to 150
°
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300
°
C
(SOIC - Lead Tips Only)
For Recommended soldering conditions see Tech Brief TB389.
θ
JA
(
°
C/W)
97
38
48
θ
JC
(
°
C/W)
N/A
N/A
10
Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . 0
°
C to 85
°
C
Maximum Operating Junction Temperature . . . . . . . . . . . . . 125
°
C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
±
10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
θ
JC,
the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCC SUPPLY CURRENT
Bias Supply Current
I
VCC
HIP6601B, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6603B, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6601B, f
PWM
= 1MHz, V
PVCC
= 12V
HIP6603B, f
PWM
= 1MHz, V
PVCC
= 12V
-
4.4
6.2
mA
-
2.5
3.6
mA
Upper Gate Bias Current
I
PVCC
-
200
430
μ
A
-
1.8
3.3
mA
POWER-ON RESET
VCC Rising Threshold
9.7
9.95
10.4
V
VCC Falling Threshold
7.3
7.6
8.0
V
PWM INPUT
Input Current
I
PWM
V
PWM
= 0V or 5V (See
Block Diagram
)
-
500
-
μ
A
PWM Rising Threshold
-
3.6
-
V
PWM Falling Threshold
-
1.45
-
V
UGATE Rise Time
t
RUGATE
t
RLGATE
t
FUGATE
t
FLGATE
t
PDLUGATE
t
PDLLGATE
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
V
PVCC
= 12V, 3nF Load
-
20
-
ns
LGATE Rise Time
-
50
-
ns
UGATE Fall Time
-
20
-
ns
LGATE Fall Time
-
20
-
ns
UGATE Turn-Off Propagation Delay
-
30
-
ns
LGATE Turn-Off Propagation Delay
-
20
-
ns
Shutdown Window
1.4
-
3.6
V
Shutdown Holdoff Time
-
230
-
ns
OUTPUT
Upper Drive Source Impedance
R
UGATE
V
PVCC
= 5V
V
PVCC
= 12V
V
PVCC
= 5V
V
PVCC
= 12V
V
PVCC
= 5V
V
PVCC
= 12V
V
PVCC
= 5V
-
1.7
3.0
-
3.0
5.0
Upper Drive Sink Impedance
R
UGATE
-
2.3
4.0
-
1.1
2.0
Lower Drive Source Current
Equivalent Drive Source Impedance
I
LGATE
R
LGATE
R
LGATE
400
580
-
mA
500
730
-
mA
-
9
-
Lower Drive Sink Impedance
V
PVCC
= 5V or 12V
-
1.6
4.0
HIP6601B, HIP6603B, HIP6604B
相關PDF資料 |
PDF描述 |
|---|---|
| HIP6604BCR | FPGA 2000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6603B | Synchronous Rectified Buck MOSFET Drivers |
| HIP6603BCB | FPGA 1600000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN |
| HIP6603BCB-T | Synchronous Rectified Buck MOSFET Drivers |
| HIP6601BECB | Synchronous Rectified Buck MOSFET Drivers |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HIP6604BCR | 功能描述:IC DRIVER MOSF SYNC BUCK 16-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| HIP6604BCR-T | 功能描述:IC DRIVER MOSF SYNC BUCK 16-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| HIP6604BCRZ | 功能描述:功率驅動器IC SYNCH-RECTIFIED BUCK MSFT DRVR 16LD RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6604BCRZ-T | 功能描述:功率驅動器IC SYNCH-RECTIFIED BUCK MSFT DRVR 16LD RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| HIP6604CR | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Synchronous Rectified Buck MOSFET Drivers |
發(fā)布緊急采購，3分鐘左右您將得到回復。