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參數(shù)資料
| 型號(hào)： | HM-65162883 |
| 廠商： | Intersil Corporation |
| 英文描述： | 2K x 8 Asynchronous CMOS Static RAM |
| 中文描述： | 2K × 8異步的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | HM-65162883 |
4
AC Electrical Specifications
V
CC
= 5V
±
10%, T
A
= -40
o
C to +85
o
C (HM-65162S-9, HM-65162B-9, HM65162-9, HM-65162C-9)
SYMBOL
PARAMETER
LIMITS
UNITS
CONDITIONS
HM-65162S-9
HM-65162B-9
HM-65162-9
HM-65162C-9
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
READ CYCLE
(1) TAVAX
Read Cycle Time
55
-
70
-
90
-
90
-
ns
(Notes 1, 3)
(2) TAVQV
Address Access Time
-
55
-
70
-
90
-
90
ns
(Notes 1, 3, 4)
(3) TELQV
Chip Enable Access
Time
-
55
-
70
-
90
-
90
ns
(Notes 1, 3)
(4) TELQX
Chip Enable Output
Enable Time
5
-
5
-
5
-
5
-
ns
(Notes 2, 3)
(5) TGLQV
Output Enable Access
Time
-
35
-
50
-
65
-
65
ns
(Notes 1, 3)
(6) TGLQX
Output Enable Output
Enable Time
5
-
5
-
5
-
5
-
ns
(Notes 2, 3)
(7) TEHQZ
Chip Enable Output
Disable Time
-
35
-
35
-
50
-
50
ns
(Notes 2, 3)
(8) TGHQZ
Output Enable Output
Disable Time
-
30
-
35
-
40
-
40
ns
(Notes 2, 3)
(9) TAVQX
Output Hold From
Address Change
5
-
5
-
5
-
5
-
ns
(Notes 1, 3)
WRITE CYCLE
(10) TAVAX
Write Cycle Time
55
-
70
-
90
-
90
-
ns
(Notes 1, 3)
(11) TELWH
Chip Selection to End of
Write
45
-
45
-
55
-
55
-
ns
(Notes 1, 3)
(12) TAVWL
Address Setup Time
5
-
10
-
10
-
10
-
ns
(Notes 1, 3)
(13) TWLWH
Write Enable Pulse
Width
40
-
40
-
55
-
55
-
ns
(Notes 1, 3)
(14) TWHAX
Write Enable Read
Setup Time
10
-
10
-
10
-
10
-
ns
(Notes 1, 3)
(15) TGHQZ
Output Enable Output
Disable Time
-
30
-
35
-
40
-
40
ns
(Notes 2, 3)
(16) TWLQZ
Write Enable Output
Disable Time
-
30
-
40
-
50
-
50
ns
(Notes 2, 3)
(17) TDVWH
Data Setup Time
25
-
30
-
30
-
30
-
ns
(Notes 1, 3)
(18) TWHDX
Data Hold Time
10
-
10
-
15
-
15
-
ns
(Notes 1, 3)
(19) TWHQX
Write Enable Output
Enable Time
0
-
0
-
0
-
0
-
ns
(Notes 1, 3)
(20) TWLEH
Write Enable Pulse
Setup Time
45
-
40
-
55
-
55
-
ns
(Notes 1, 3)
(21) TDVEH
Chip Enable Data
Setup Time
25
-
30
-
30
-
30
-
ns
(Notes 1, 3)
(22) TAVWH
Address Valid to End of
Write
45
-
50
-
65
-
65
-
ns
(Notes 1, 3)
NOTES:
1. Input pulse levels: 0 to 3.0V; Input rise and fall times: 5ns (max); Input and output timing reference level: 1.5V; Output load: 1 TTL gate
equivalent and C
L
= 50pF (min) - for C
L
greater than 50pF, access time is derated by 0.15ns per pF.
2. Tested at initial design and after major design changes.
3. V
CC
= 4.5 and 5.5V.
4. TAVQV = TELQV + TAVEL.
HM-65162
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM4-65162-9 | 2K x 8 Asynchronous CMOS Static RAM |
| HM4-65162B-9 | 2K x 8 Asynchronous CMOS Static RAM |
| HM4-65162C-9 | 2K x 8 Asynchronous CMOS Static RAM |
| HM1-6561B883 | 256 x 4 CMOS RAM |
| HM-6561 | 256 x 4 CMOS RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM-6516883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2K x 8 CMOS RAM |
| HM-6518 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM |
| HM-6518/883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM |
| HM-6518883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM |
| HM651R5 | 制造商:TT Electronics / BI Technologies 功能描述:HI CURRENT LOW PROFILE SMT INDUCTOR |
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