參數(shù)資料
型號: HM-6561883
廠商: Intersil Corporation
英文描述: 256 x 4 CMOS RAM
中文描述: 256 × 4 CMOS存儲器
文件頁數(shù): 2/9頁
文件大?。?/td> 143K
代理商: HM-6561883
6-118
Functional Diagram
NOTES:
1. All lines positive logic-active high.
2. Three-state Buffers: A high
output active.
3. Data Latches: L high
Q = D and Q latches on falling edge of L.
4. Address Latches and Gated Decoders: Latch on falling edge of E and gate on falling edge of E.
A
A
A4
A3
A2
LATCHED ADDRESS
REGISTER
GATED COLUMN
DECODER
AND DATA I / O
DQ0
DQ1
DQ2
DQ3
L
GATED
ROW
DECODER
32
5
5
A
A
32 x 32
MATRIX
8
8
8
8
G
LATCH
A
Q
D
L
A
LATCH
A
Q
D
L
A
LATCH
A
Q
D
L
A
LATCH
A
Q
D
L
A
S1
S2
W
E
A0
A1
A5
A6
A7
G
3
3
L
LATCHED
ADDRESS
REGISTER
HM-6561/883
相關(guān)PDF資料
PDF描述
HM1-6561883 256 x 4 CMOS RAM
HM1-65787H-2 HIGH SPEED CMOS SRAM
HM3-65787H-2 HIGH SPEED CMOS SRAM
HM4-65787H-2 HIGH SPEED CMOS SRAM
HMT-65787H-2 HIGH SPEED CMOS SRAM
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