- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371831 > HM-6561883 (Intersil Corporation) 256 x 4 CMOS RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HM-6561883 |
| 廠商： | Intersil Corporation |
| 英文描述： | 256 x 4 CMOS RAM |
| 中文描述： | 256 × 4 CMOS存儲(chǔ)器 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 143K |
| 代理商： | HM-6561883 |
6-120
TABLE 2. HM-6561/883 A.C. ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP A
SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
HM-6561B/883
HM-6561/883
MIN
MAX
MIN
MAX
Chip Enable
Access Time
(1) TELQV
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
-
220
-
300
ns
Address Access
Time
(2) TAVQV
VCC = 4.5 and
5.5V, (Note 3)
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
-
220
-
300
ns
Chip Select
Output Enable
Time
(3) TSLQX
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
5
-
5
-
ns
Chip Select
Output Disable
Time
(4) TSHQZ
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
-
120
-
150
ns
Chip Enable Pulse
Negative Width
(5) TELEH
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
220
-
300
-
ns
Chip Enable Pulse
Positive Width
(6) TEHEL
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
100
-
100
-
ns
Address Setup
Time
(7) TAVEL
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
0
-
0
-
ns
Address Hold Time
(8) TELAX
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
40
-
50
-
ns
Data Setup Time
(9) TDVWH
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
100
-
150
-
ns
Data Hold Time
(10) TWHDX
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
0
-
0
-
ns
Write Data Delay
Time
(11) TWLDV
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
20
-
30
-
Chip Select Write
Pulse Setup Time
(12) TWLSH
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
120
-
180
-
ns
Chip Enable Write
Pulse Setup Time
(13) TWLEH
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
120
-
180
-
ns
Chip Select Write
Pulse Hold Time
(14) TSLWH
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
120
-
180
-
ns
Chip Enable Write
Pulse Hold Time
(15) TELWH
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
120
-
180
-
ns
Write Enable Pulse
Width
(16) TWLWH
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
120
-
180
-
ns
Read or Write
Cycle Time
(17) TELEL
VCC = 4.5 and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
320
-
400
-
ns
NOTES:
1. All voltages referenced to device GND.
2. Input pulse levels: 0.8V to VCC-2.0V; Input rise and fall times: 5ns (max); Input and output timing reference level: 1.5V; Output load:
IOL = 1.6mA, IOH = -0.4mA, CL = 50pF (min) - for CL greater than 50pF, access time is derated by 0.15ns per pF.
3. TAVQV = TELQV + TAVEL.
HM-6561/883
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM1-6561883 | 256 x 4 CMOS RAM |
| HM1-65787H-2 | HIGH SPEED CMOS SRAM |
| HM3-65787H-2 | HIGH SPEED CMOS SRAM |
| HM4-65787H-2 | HIGH SPEED CMOS SRAM |
| HMT-65787H-2 | HIGH SPEED CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM-65642 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8K x 8 Asynchronous CMOS Static RAM |
| HM-65642/883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8K x 8 Asynchronous CMOS Static RAM |
| HM-65642_02 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8K x 8 Asynchronous CMOS Static RAM |
| HM-65642883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8K x 8 Asynchronous CMOS Static RAM |
| HM656R0 | 制造商:TT Electronics / BI Technologies 功能描述:HI CURRENT LOW PROFILE SMT INDUCTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。