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參數資料
| 型號： | HM1-6508883 |
| 廠商： | Intersil Corporation |
| 英文描述： | 1024 x 1 CMOS RAM |
| 中文描述： | 1024 × 1 CMOS存儲器 |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 234K |
| 代理商： | HM1-6508883 |
6-73
Timing Waveforms
TABLE 3. HM-6508/883 ELECTRICAL PERFORMANCE SPECIFICATIONS
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Capacitance
CI
VCC = Open, f = 1MHz, All
Measurements Referenced
to Device Ground
1
T
A
= +25
o
C
-
6
pF
Output Capacitance
CO
VCC = Open, f = 1MHz, All
Measurements Referenced
to Device Ground
1
T
A
= +25
o
C
-
10
pF
NOTE:
1. The parameters listed in Table 3 are controlled via design or process; parameters are characterized upon initial design and after major
process and/or design changes.
TABLE 4. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
SUBGROUPS
Initial Test
100%/5004
-
Interim Test
100%/5004
1, 7, 9
PDA
100%/5004
1
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A
Samples/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Groups C & D
Samples/5005
1, 7, 9
(8)
-1
TIME
HIGH
TAVEL
VALID
TELAX
(8) TAVEL
TELEL
TELEH
(6)
VALID OUTPUT
(5)
(7)
TEHEL
(9)
(15)
(7)
NEXT
TEHEL
TEHOZ
TELOV
TELOX
(5)
(1)
(3)
(3)
TAVQV
TEHOZ
0
1
2
3
4
5
REFERENCE
A
E
W
D
O
FIGURE 1. READ CYCLE
HM-6508/883
相關PDF資料 |
PDF描述 |
|---|---|
| HM-6508 | 1024 x 1 CMOS RAM |
| HM-6508883 | 1024 x 1 CMOS RAM |
| HM1-6514-9 | 1024 x 4 CMOS RAM |
| HM1-6514S-9 | 1024 x 4 CMOS RAM |
| HM-6514 | 1024 x 4 CMOS RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HM1-6508-9 WAF | 制造商:Harris Corporation 功能描述: |
| HM1-6508B/883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM |
| HM1-6508B/883 WAF | 制造商:Harris Corporation 功能描述: |
| HM1-6508B883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM |
| HM1-6508B-9 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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