參數(shù)資料
型號： HM1-65162B-9
廠商： INTERSIL CORP
元件分類： SRAM
英文描述： 2K x 8 Asynchronous CMOS Static RAM
中文描述： 2K X 8 STANDARD SRAM, 70 ns, CDIP24
封裝： CERAMIC, DIP-24
文件頁數(shù)： 3/7頁
文件大小： 145K
代理商： HM1-65162B-9
3
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to V
CC
+0.3V
Typical Derating Factor . . . . . . . . . . 05mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-65162S-9, HM-65162B-9,
HM-65162-9, HM65162C-9. . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300
o
C
θ
JA
(
o
C/W)
48
66
θ
JC
(
o
C/W)
8
12
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26000 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V
CC
= 5V
±
10%; T
A
= -40
o
C to +85
o
C (HM-65162S-9, HM-65162B-9, HM-65162-9, HM-65162C-9)
SYMBOL
PARAMETER
LIMITS
UNITS
TEST CONDITIONS
MIN
MAX
ICCSB1
Standby Supply Current
-
50
μ
A
HM-65162B-9, IO = 0mA,
E = V
CC
- 0.3V, V
CC
= 5.5V
HM-65162S-9, HM65162-9,
IO = 0mA, E = V
CC
- 0.3V,
V
CC
= 5.5V
HM-65162C-9, IO = 0mA,
E = V
CC
- 0.3V, V
CC
= 5.5V
E = 2.2V, IO = 0mA, V
CC
= 5.5V
E = 0.8V, IO = 0mA, V
CC
= 5.5V
E = 0.8V, IO = 0mA, f = 1MHz,
V
CC
= 5.5V
HM-65162B-9, IO = 0mA,
V
CC
= 2.0V, E = VCC - 0.3V
HM-65162S-9, HM-65162-9,
IO = 0mA, V
CC
= 2.0V,
E = V
CC
- 0.3V
HM-65162C-9, IO = 0mA,
V
CC
= 2.0V, E = V
CC
- 0.3V
-
100
μ
A
-
900
μ
A
ICCSB
Standby Supply Current
-
8
mA
ICCEN
Enabled Supply Current
-
70
mA
ICCOP
Operating Supply Current (Note 1)
-
70
mA
ICCDR
Data Retention Supply Current
-
20
μ
A
-
40
μ
A
-
300
μ
A
VCCDR
Data Retention Supply Voltage
2.0
-
V
II
Input Leakage Current
-1.0
+1.0
μ
A
μ
A
VI = V
CC
or GND, V
CC
= 5.5V
VIO = V
CC
or GND, V
CC
= 5.5V
V
CC
= 4.5V
V
CC
= 5.5V
IO = 4.0mA, V
CC
= 4.5V
IO = -1.0mA, V
CC
= 4.5V
IO = -100
μ
A, V
CC
= 4.5V
IIOZ
Input/Output Leakage Current
-1.0
+1.0
V
IL
V
IH
VOL
Input Low Voltage
-0.3
0.8
V
Input High Voltage
2.2
V
CC
+0.3
0.4
V
Output Low Voltage
-
V
VOH1
Output High Voltage
2.4
-
V
VOH2
Output High Voltage (Note 2)
V
CC
-0.4
-
V
Capacitance
T
A
= +25
o
C
SYMBOL
PARAMETER
MAX
UNITS
TEST CONDITIONS
CI
Input Capacitance (Note 2)
10
pF
f = 1MHz, All measurements are
referenced to device GND
CIO
Input/Output Capacitance (Note 2)
12
pF
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
HM-65162
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