參數(shù)資料
型號： HM1-6516B-9
廠商： INTERSIL CORP
元件分類： SRAM
英文描述： 2K x 8 CMOS RAM
中文描述： 2K X 8 STANDARD SRAM, 120 ns, CDIP24
封裝： CERAMIC, DIP-24
文件頁數(shù)： 3/6頁
文件大?。?/td> 31K
代理商： HM1-6516B-9
6-3
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input or Output Voltage Applied for all Grades. . . . . . .GND -0.3V to
V
CC
+0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Ranges:
HM-6516B-9, HM-6516-9 . . . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
θ
JA
θ
JC
8
o
C/W
12
o
C/W
48
o
C/W
66
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25953 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V
CC
= 5V
±
10%; T
A
= -40
o
C to +85
o
C (HM-6516B-9, HM-6516-9)
SYMBOL
PARAMETER
LIMITS
UNITS
TEST CONDITIONS
MIN
MAX
ICCSB
Standby Supply Current
-
50
μ
A
IO = 0mA, VI = V
CC
or GND,
V
CC
= 5.5V, HM-6516B-9
-
100
μ
A
IO = 0mA, VI = V
CC
or GND,
HM-6516-9
ICCOP
Operating Supply Current (Note 1)
-
10
mA
f = 1MHz, IO = 0mA, G = V
CC
, V
CC
=
5.5V, VI = V
CC
or GND
ICCDR
Data Retention Supply Current
-
25
μ
A
V
CC
= 2.0V, IO = 0mA, VI = V
CC
or
GND, E = V
CC
, HM-6516B-9
-
50
μ
A
V
CC
= 2.0V, IO = 0mA, VI = V
CC
or
GND, E = V
CC
, HM-6516-9
VCCDR
Data Retention Supply Voltage
2.0
-
V
II
Input Leakage Current
-1.0
+1.0
μ
A
VI = V
CC
or GND, V
CC
= 5.5V
IIOZ
Input/Output Leakage Current
-1.0
+1.0
μ
A
VIO = V
CC
or GND, V
CC
= 5.5V
V
IL
Input Low Voltage
-0.3
0.8
V
V
CC
= 4.5V
V
IH
Input High Voltage
2.4
V
CC
+0.3
V
V
CC
= 5.5V
VOL
Output Low Voltage
-
0.4
V
IO = 3.2mA, V
CC
= 4.5V
VOH1
Output High Voltage
2.4
-
V
IO = -1.0mA, V
CC
= 4.5V
VOH2
Output High Voltage (Note 2)
V
CC
-0.4
-
V
IO = -100
μ
A, V
CC
= 4.5V
Capacitance
T
A
= +25
o
C
SYMBOL
PARAMETER
MAX
UNITS
TEST CONDITIONS
CI
Input Capacitance (Note 2)
8
pF
f = 1MHz, All measurements are
referenced to device GND
CIO
Input/Output Capacitance (Note 2)
10
pF
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
HM-6516
相關PDF資料
PDF描述
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HM4-6516-9 2K x 8 CMOS RAM
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HM1-65162C-9 2K x 8 Asynchronous CMOS Static RAM
相關代理商/技術參數(shù)
參數(shù)描述
HM1-6516C-9 制造商:Rochester Electronics LLC 功能描述:- Bulk
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HM1-6518-5 制造商:Rochester Electronics LLC 功能描述:- Bulk
HM1-6518883 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM
HM1-6518-9 制造商:Rochester Electronics LLC 功能描述:- Bulk
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