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參數(shù)資料
| 型號(hào)： | HM1-6516B-9 |
| 廠商： | INTERSIL CORP |
| 元件分類： | SRAM |
| 英文描述： | 2K x 8 CMOS RAM |
| 中文描述： | 2K X 8 STANDARD SRAM, 120 ns, CDIP24 |
| 封裝： | CERAMIC, DIP-24 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | HM1-6516B-9 |
6-4
AC Electrical Specifications
V
CC
= 5V
±
10%; T
A
= -40
o
C to +85
o
C (HM-6516B-9, HM-6516-9)
SYMBOL
PARAMETER
LIMITS
UNITS
TEST
CONDITIONS
HM-6516B-9
HM-6516-9
MIN
MAX
MIN
MAX
(1)
TELQV
Chip Enable Access Time
-
120
-
200
ns
(Notes 1, 3)
(2)
TAVQV
Address Access Time
-
120
-
200
ns
(Notes 1, 3, 4)
(3)
TELQX
Chip Enable Output Enable Time
10
-
10
-
ns
(Notes 2, 3)
(4)
TWLQZ
Write Enable Output Disable Time
-
50
-
80
ns
(Notes 2, 3)
(5)
TEHQZ
Chip Enable Output Disable Time
-
50
-
80
ns
(Notes 2, 3)
(6)
TGLQV
Output Enable Output Valid Time
-
80
-
80
ns
(Notes 1, 3)
(7)
TGLQX
Output Enable Output Enable Time
10
-
10
-
ns
(Notes 2, 3)
(8)
TGHQZ
Output Enable Output DisableTime
-
50
-
80
ns
(Notes 2, 3)
(9)
TELEH
Chip Enable Pulse Negative Width
120
-
200
-
ns
(Notes 1, 3)
(10)
TEHEL
Chip Enable Pulse Positive Width
50
-
80
-
ns
(Notes 1, 3)
(11)
TAVEL
Address Setup Time
0
-
0
-
ns
(Notes 1, 3)
(12)
TELAX
Address Hold Time
30
-
50
-
ns
(Notes 1, 3)
(13)
TWLWH
Write Enable Pulse Width
120
-
200
-
ns
(Notes 1, 3)
(14)
TWLEH
Write Enable Pulse Setup Time
120
-
200
-
ns
(Notes 1, 3)
(15)
TELWH
Write Enable Pulse Hold Time
120
-
200
-
ns
(Notes 1, 3)
(16)
TDVWH
Data Setup Time
50
-
80
-
ns
(Notes 1, 3)
(17)
TWHDX
Data Hold Time
10
-
10
-
ns
(Notes 1, 3)
(18)
TELEL
Read or Write Cycle Time
170
-
280
-
ns
(Notes 1, 3)
NOTES:
1. Input pulse levels: 0.8V to V
CC
- 2.0V; Input rise and fall times: 5ns (max); Input and output timing reference level: 1.5V; Output load:
1 TTL gate equivalent, C
L
= 50pF (min) - for C
L
greater than 50pF, access time is derated by 0.15ns per pF.
2. Tested at initial design and after major design changes.
3. V
CC
= 4.5V and 5.5V.
4. TAVQV = TELQV + TAVEL.
HM-6516
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM-6516 | CMOS 2048 x 8 Static Random(16K 靜態(tài)RAM) |
| HM4-6516-9 | 2K x 8 CMOS RAM |
| HM1-65162-9 | 2K x 8 Asynchronous CMOS Static RAM |
| HM1-65162B-9 | 2K x 8 Asynchronous CMOS Static RAM |
| HM1-65162C-9 | 2K x 8 Asynchronous CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM1-6516C-9 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HM1-6518/883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM |
| HM1-6518-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HM1-6518883 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:1024 x 1 CMOS RAM |
| HM1-6518-9 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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