參數(shù)資料
型號(hào): HM514400BL
廠商: Hitachi,Ltd.
英文描述: 1,048,576-word X 4-bit Dynamic Random Access Memory
中文描述: 1,048,576字× 4位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器
文件頁數(shù): 1/27頁
文件大小: 235K
代理商: HM514400BL
HM514400B/BL Series
HM514400C/CL Series
1,048,576-word
×
4-bit Dynamic Random Access Memory
Rev. 1.0
Nov. 29, 1994
The Hitachi HM514400B/BL, HM514400C/CL
are CMOS dynamic RAM organized 1,048,576-
word
×
4-bit. HM514400B/BL, HM514400C/CL
have realized higher density, higher performance
and various functions by employing 0.8
μ
m CMOS
process technology and some new CMOS circuit
design technologies. The HM514400B/BL,
HM514400C/CL offer Fast Page Mode as a high
speed access mode. Multiplexed address input
permits the HM514400B/BL, HM514400C/CL to
be packaged in standard 300-mil 26-pin plastic
SOJ, standard 400-mil 20-pin plastic ZIP and 26-
pin plastic TSOP II.
Features
Single 5 V (
±
10%)
High speed
— Access time
60 ns/70 ns/80 ns (max)
Low power dissipation
— Active mode
605 mW/550 mW/495 mW (max)
— Standby mode 11 mW (max)
0.55 mW (max) (L-version)
Fast page mode capability
1024 refresh cycles : 16 ms
1024 refresh cycles : 128 ms (L-version)
3 variations of refresh
RAS
-only refresh
CAS
-before-
RAS
refresh
— Hidden refresh
Test function
Battery back up operation
— HM514400BL Series (L-version)
— HM514400CL Series (L-version)
ADE-203-269A (Z)
相關(guān)PDF資料
PDF描述
HM514400C 1,048,576-word X 4-bit Dynamic Random Access Memory
HM514400CL 1,048,576-word X 4-bit Dynamic Random Access Memory
HM5164165F 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165FJ-5 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
HM5164165FJ-6 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM514400BLR-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HM514400BLR-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HM514400BLR-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HM514400BLRR-6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
HM514400BLRR-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM