參數(shù)資料
型號(hào)： HM5225165B
廠商： Hitachi,Ltd.
英文描述： 256M LVTTL interface SDRAM(256M LVTTL接口同步DRAM)
中文描述： 256M LVTTL接口的SDRAM（256M LVTTL接口同步的DRAM）
文件頁(yè)數(shù)： 30/64頁(yè)
文件大?。?/td> 802K
代理商： HM5225165B
HM5225165B/HM5225805B/HM5225405B-75/A6/B6
30
Write command to Read command interval:
1. Same bank, same ROW address:
When the read command is executed at the same ROW address of the
same bank as the preceding write command, the read command can be performed after an interval of no less
than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the
read command is executed.
WRITE to READ Command Interval (1)
CLK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CAS
Latency
DQM,
DQMU/DQML
Burst Write Mode
CAS
Latency = 2
Burst Length = 4
Bank 0
WRITE to READ Command Interval (2)
CLK
Command
Din
WRIT
READ
in A0
out B1
out B2
out B3
out B0
Dout
Column = A
Write
Column = B
Read
Column = B
Dout
CAS
Latency
in A1
DQM,
DQMU/DQML
Burst Write Mode
CAS
Latency = 2
Burst Length = 4
Bank 0
2. Same bank, different ROW address:
When the ROW address changes, consecutive read commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank:
When the bank changes, the read command can be performed after an interval of no less
than 1 clock, provided that the other bank is in the bank-active state. However, in the case of a burst write,
data will continue to be written until one clock before the read command is executed (as in the case of the
same bank and the same address).
相關(guān)PDF資料
PDF描述
HM5251405B 512-Mbit SDRAM(512M位同步RAM)
HM5251805B 512-Mbit SDRAM(512M位同步RAM)
HM5251165B 512-Mbit SDRAM(512M位同步RAM)
HM5257405BTD-75 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5257165B 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5225165B/5805B/5405B-75/A6/B6 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:256M LVTTL Interface SDRAM 133 MHz/100 MHz Preli
HM5225165B-75 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225165B-A6 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225165B-B6 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5225165BLTT-75 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
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