參數(shù)資料
型號(hào)： HM5257405BTD-A6
廠商： ELPIDA MEMORY INC
元件分類(lèi)： DRAM
英文描述： 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
中文描述： 128M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 14/62頁(yè)
文件大?。?/td> 463K
代理商： HM5257405BTD-A6
HM5257165B/HM5257805B/HM5257405B-75/A6
Data Sheet E0081H10
14
Self-refresh entry [SELF]:
When this command is input during the IDLE state, the SDRAM starts self-
refresh operation. After the execution of this command, self-refresh continues while CKE is Low. Since self-
refresh is performed internally and automatically, external refresh operations are unnecessary.
Power down mode entry:
When this command is executed during the IDLE state, the SDRAM enters power
down mode. In power down mode, power consumption is suppressed by cutting off the initial input circuit.
Self-refresh exit:
When this command is executed during self-refresh mode, the SDRAM can exit from self-
refresh mode. After exiting from self-refresh mode, the SDRAM enters the IDLE state.
Power down exit:
When this command is executed at the power down mode, the SDRAM can exit from
power down mode. After exiting from power down mode, the SDRAM enters the IDLE state.
Function Truth Table
The following table shows the operations that are performed when each command is issued in each mode of
the SDRAM.
The following table assumes that CKE is high.
Current state
CS
RAS
CAS
WE
Address
Command
Operation
Precharge
H
×
×
×
×
×
DESL
Enter IDLE after t
RP
Enter IDLE after t
RP
ILLEGAL*
4
L
H
H
H
NOP
L
H
L
H
BA, CA, A10 READ/READ A
L
H
L
L
BA, CA, A10 WRIT/WRIT A
ILLEGAL*
4
L
L
H
H
BA, RA
ACTV
ILLEGAL*
4
L
L
H
L
BA, A10
PRE, PALL
NOP*
6
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Idle
H
×
×
×
×
×
DESL
NOP
L
H
H
H
NOP
NOP
L
H
L
H
BA, CA, A10 READ/READ A
ILLEGAL*
5
L
H
L
L
BA, CA, A10 WRIT/WRIT A
ILLEGAL*
5
L
L
H
H
BA, RA
ACTV
Bank and row active
L
L
H
L
BA, A10
PRE, PALL
NOP
L
L
L
H
×
REF, SELF
Refresh
L
L
L
L
MODE
MRS
Mode register set
相關(guān)PDF資料
PDF描述
HM5257805B-75 Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-30
HM5257405B-75 Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-30
HM5257805B-A6 16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
HM5257405B-A6 Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:18-32
HM5257805BTD-75 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HM5257805B-75 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5257805B-A6 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5257805BTD-75 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5257805BTD-A6 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
HM5259165B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
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