參數(shù)資料
型號(hào): HM5259805BTD-A6
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
中文描述: 64M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁(yè)數(shù): 47/63頁(yè)
文件大小: 368K
代理商: HM5259805BTD-A6
HM5259165B/HM5259805B/HM5259405B-75/A6
Data Sheet E0118H10
47
DC Characteristics
(Ta = 0 to +70
C, V
CC
, V
CC
Q = 3.3 V ± 0.3 V, V
SS
, V
SS
Q = 0 V)
(HM5259805B)
HM5259805B
-75
-A6
Parameter
Symbol
Min
Max
Min
Max
Unit
Test conditions
Notes
Operating current
(
CAS
latency = 2)
(
CAS
latency = 3)
I
CC1
I
CC1
I
CC2P
220
190
mA
Burst length = 1
t
RC
= min
1, 2, 3
220
190
mA
Standby current in power
down
6
6
mA
CKE = V
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
=
6
Standby current in power
down (input signal stable)
I
CC2PS
4
4
mA
7
Standby current in non
power down
I
CC2N
40
40
mA
CKE,
CS
= V
IH
,
t
CK
= 12 ns
CKE = V
IH
, t
CK
=
4
Standby current in non
power down (input signal
stable)
I
CC2NS
18
18
mA
9
Active standby current in
power down
I
CC3P
8
8
mA
CKE = V
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
=
1, 2, 6
Active standby current in
power down (input signal
stable)
I
CC3PS
6
6
mA
2, 7
Active standby current in
non power down
I
CC3N
60
60
mA
CKE,
CS
= V
IH
,
t
CK
= 12 ns
CKE = V
IH
, t
CK
=
1, 2, 4
Active standby current in
non power down (input
signal stable)
I
CC3NS
30
30
mA
2, 9
Burst operating current
(
CAS
latency = 2)
(
CAS
latency = 3)
I
CC4
I
CC4
I
CC5
I
CC6
190
190
mA
t
CK
= min, BL = 4
1, 2, 5
260
190
mA
Refresh current
330
330
mA
t
RC
= min
V
IH
V
0.2 V
V
IL
0.2 V
0
Vin
V
CC
0
Vout
V
CC
DQ = disable
3
Self refresh current
6
6
mA
8
Input leakage current
I
LI
I
LO
1
1
1
1
μA
Output leakage current
1.5
1.5
1.5
1.5
μA
Output high voltage
V
OH
V
OL
2.4
2.4
V
I
OH
=
4 mA
I
OL
= 4 mA
Output low voltage
0.4
0.4
V
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