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參數(shù)資料
| 型號： | HM621100A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 1048576-word ×1-bit High Speed CMOS Static RAM(1048576字 ×1位高速CMOS SRAM) |
| 中文描述： | 1048576字× 1位高速CMOS靜態(tài)RAM（1048576字× 1位高速CMOS SRAM的） |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 94K |
| 代理商： | HM621100A |
HM621100A Series
6
Output load (A)
Output load (B)
(For t
HZ
,
t
,
t
WZ
and
t
OW
)
Note: 1. Including
+ 5 V
480
5 pF
*1
255
Dout
+ 5 V
480
30 pF
*1
255
Dout
Read Cycle
HM621100A-
20
HM621100A-
25
HM621100A-
35
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Read cycle time
t
RC
20
—
25
—
35
—
ns
Address access time
t
AA
—
20
—
25
—
35
ns
Chip select access time
t
ACS
—
20
—
25
—
35
ns
Chip selection to output in low-Z
t
LZ
*1
5
—
5
—
5
—
ns
Chip deselection to output in high-Z
t
HZ
*1
0
10
0
12
0
15
ns
Output hold from address change
t
OH
5
—
5
—
5
—
ns
Chip selection to power up time
t
PU
0
—
0
—
0
—
ns
Chip deselection to power down time t
PD
Note:
1. Transition is measured
±
200 mV from high impedance voltage with Load (B). This parameter is
sampled and not 100% tested.
—
12
—
15
—
25
ns
Read Timing Waveform (1)
(
WE
= V
IH
,
CS
= V
IL
)
t
RC
Address
t
AA
t
OH
Dout
Valid Data
t
OH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM621400HCLJP-10 | 4M High Speed SRAM (4-Mword x 1-bit) |
| HM621400HCJP-10 | 4M High Speed SRAM (4-Mword x 1-bit) |
| HM621400HC | 4M High Speed SRAM (4-Mword x 1-bit) |
| HM621400HJP-10 | 4M High Speed SRAM (4-Mword x 1-bit) |
| HM621400HJP-12 | 4M High Speed SRAM (4-Mword x 1-bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM621100AJP20 | 制造商:HITACHI 功能描述:GREEN TEST DOTS |
| HM621100AJP-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 SRAM |
| HM621100AJP-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 SRAM |
| HM621100AJP-35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 SRAM |
| HM621100ALJP-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 SRAM |
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