參數(shù)資料
型號(hào): HM621400H
廠(chǎng)商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (4-Mword ×1-bit)(4M高速靜態(tài)RAM(4M字×1位))
中文描述: 4分高速SRAM(4 Mword × 1位)(4分高速靜態(tài)隨機(jī)存儲(chǔ)器(4分字× 1位))
文件頁(yè)數(shù): 1/15頁(yè)
文件大?。?/td> 108K
代理商: HM621400H
HM621400H Series
4M High Speed SRAM (4-Mword
×
1-bit)
ADE-203-787D (Z)
Rev. 1.0
Sept. 15, 1998
Description
The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword
×
1-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
circuit designing technology. It is most appropriate for the application which requires high speed and high
density memory, such as cache and buffer memory in system. The HM621400H is packaged in 400-mil
32-pin SOJ for high density surface mounting.
Features
Single 5.0 V supply : 5.0 V
±
10 %
Access time 10/12/15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 200/180/160 mA (max)
TTL standby current: 70/60/50 mA (max)
CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
Data retention current: 0.8 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center V
CC
and V
SS
type pinout
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