參數資料
型號: HM621400H
廠商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (4-Mword ×1-bit)(4M高速靜態(tài)RAM(4M字×1位))
中文描述: 4分高速SRAM(4 Mword × 1位)(4分高速靜態(tài)隨機存儲器(4分字× 1位))
文件頁數: 14/15頁
文件大?。?/td> 108K
代理商: HM621400H
HM621400H Series
14
Revision Record
Rev.
0.0
Date
Jun. 4, 1997
Contents of Modification
Initial issue
Drawn by
Y. Saitoh
Approved by
A. Ide
0.1
Nov. 20, 1997
Change of subtitle
K. Makuta
K. Makuta
0.2
Dec. 5, 1997
Features
Addition of Operating current
Addition of TTL standby current
Addition of CMOS standby current
Addition of Data retention current
Addition of Data retention voltage
Change of Block Diagram
Operation table
Title: I/O to Dout
Dout: Din to High-Z
Absolute Maximum Ratings
P
: 1.0/1.5 W to 1.0 W
Change of notes
Recommended DC Operating Conditions
Change of notes
DC Characteristics
I
CC
(max): 240/200/190 mA to 170/150/130 mA
I
SB
(max): 100/100/100 mA to 70/60/50 mA
I
(max): 10/1 mA to 5/1 mA
Test conditions I
CC
and I
: Addition of Min cycle
Test conditions I
SB1
: Addition of f = 0 MHz
Capacitance
Addition of C
Input/output capacitance: C
I/O
to C
DOUT
AC Characteristics
Change of Output load (A)
t
OE
, t
CHZ
and t
OHZ
(max): 5/6/8 ns to 5/6/7 ns
t
AW
, t
and t
(min): 6/8/10 ns to 7/8/10 ns
t
DW
(min): 5/6/8 ns to 5/6/7 ns
t
and t
(max): 5/6/8 ns to 5/6/7 ns
Note 4.: Correct error
Low V
CC
Data Retention Characteristics
I
CCDR
: —/2/300
μ
A to —/—/300
μ
A
Features
Change of Operating current
Change of Block Diagram
DC Characteristics
I
CC
(max): 170/150/130 mA to 200/180/160 mA
T. Fukazawa
K. Makuta
0.3
May. 15, 1998
T. Fukazawa
K. Makuta
相關PDF資料
PDF描述
HM6216255HCLJP-10 4M High Speed SRAM (256-kword x 16-bit)
HM6216255HCLTT-10 4M High Speed SRAM (256-kword x 16-bit)
HM6216255HCJP-10 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x12.5 mm; Packaging: Bulk
HM6216255HI 4M high Speed SRAM (256-kword x 16-bit)
HM6216255HC 4M High Speed SRAM (256-kword x 16-bit)
相關代理商/技術參數
參數描述
HM621400HC 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (4-Mword x 1-bit)
HM621400HCJP-10 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (4-Mword x 1-bit)
HM621400HCJP-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Instructions for Using SRAM Devices Technical Update/Device
HM621400HCLJP-10 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (4-Mword x 1-bit)
HM621400HCLJP-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Instructions for Using SRAM Devices Technical Update/Device