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參數(shù)資料
| 型號(hào)： | HM62832UHP-20 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256 k High Speed SRAM (32-kword 8-bit) |
| 中文描述： | 256畝高速SRAM（32 KWord的8位） |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | HM62832UHP-20 |
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HM62832UH Series
6
AC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%, unless otherwise noted.)
Test Conditions
Input pulse levels: V
SS
to 3.0 V
Input rise and fall time: 4 ns
Input and Output timing reference levels: 1.5 V
Output load: See figures
Dout
255
480
+5 V
30 pF
*1
Dout
255
480
+5 V
5 pF
*1
Output load (A)
Note: 1. Including scope and jig
Output load (B)
(for t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
WHZ
and t
OW
)
Read Cycle
HM62832UH-15
HM62832UH-20
Parameter
Symbol
Min
Max
Min
Max
Unit
Read cycle time
t
RC
t
AA
t
ACS
t
CLZ
t
OE
t
OLZ
t
CHZ
t
OHZ
t
OH
15
—
20
—
ns
Address access time
—
15
—
20
ns
Chip select access time
—
15
—
20
ns
Chip selection to output in low-Z
*1
3
—
3
—
ns
Output enable to output valid
—
8
—
10
ns
Output enable to output in low-Z
*1
0
—
0
—
ns
Chip deselection to output in high-Z
*1
0
7
0
10
ns
Chip disable to output in high-Z
*1
0
7
0
10
ns
Output hold from address change
Note:
1. Transition is measured
±
200 mV from steady state voltage with Load (B). This parameter is
sampled and not 100% tested.
3
—
3
—
ns
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| HM628511HCJP-10 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit) |
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