參數(shù)資料
型號(hào): HM628511HCLJP-10
廠商: Hitachi,Ltd.
英文描述: 4M High Speed SRAM (512-kword x 8-bit)
中文描述: 4分高速SRAM(512 - KWord的× 8位)
文件頁數(shù): 5/13頁
文件大小: 64K
代理商: HM628511HCLJP-10
HM628511HI Series
5
DC Characteristics
(Ta = –40 to +85
°
C, V
CC
= 5.0 V
±
10 %, V
SS
= 0V)
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
II
LI
I
II
LO
I
2
μ
A
μ
A
Vin = V
SS
to V
CC
Vin = V
SS
to V
CC
Min cycle
CS
= V
, lout = 0 mA
Other inputs = V
IH
/V
IL
Output leakage current
2
Operation power
supply current
12 ns cycle I
CC
160
mA
15 ns cycle I
CC
12 ns cycle I
SB
140
Standby power supply
current
60
mA
Min cycle,
CS
= V
,
Other inputs = V
IH
/V
IL
15 ns cycle I
SB
50
I
SB1
0.1
5
mA
f = 0 MHz
V
CS
V
CC
- 0.2 V,
(1) 0 V
Vin
0.2 V or
(2) V
CC
Vin
V
CC
- 0.2 V
I
OL
= 8 mA
I
OH
= –4 mA
Output voltage
V
OL
V
OH
0.4
V
2.4
V
Notes: 1. Typical values are at V
CC
= 5.0 V, Ta = +25
°
C and not guaranteed.
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance*
1
Cin
6
pF
Vin = 0 V
Input/output capacitance*
1
Note: 1. This parameter is sampled and not 100% tested.
C
I/O
8
pF
V
I/O
= 0 V
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