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參數(shù)資料
| 型號(hào)： | HM628511HCLJP-10 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | 4M High Speed SRAM (512-kword x 8-bit) |
| 中文描述： | 4分高速SRAM（512 - KWord的× 8位） |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | HM628511HCLJP-10 |
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HM628511HI Series
7
Write Cycle
HM628511HI
-12
-15
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t
WC
t
AW
t
CW
t
WP
t
AS
t
WR
t
DW
t
DH
t
OW
t
OHZ
t
WHZ
12
—
15
—
ns
Address valid to end of write
8
—
10
—
ns
Chip select to end of write
8
—
10
—
ns
9
Write pulse width
8
—
10
—
ns
8
Address setup time
0
—
0
—
ns
6
Write recovery time
0
—
0
—
ns
7
Data to write time overlap
6
—
7
—
ns
Data hold from write time
0
—
0
—
ns
Write disable to output in low-Z
3
—
3
—
ns
1
Output disable to output in high-Z
—
6
—
7
ns
1
Write enable to output in high-Z
Note: 1. Transition is measured
±
200 mV from steady voltage with Load (B). This parameter is sampled
and not 100% tested.
2. Address should be valid prior to or coincident with
CS
transition low.
3.
WE
and/or
CS
must be high during address transition time.
4. if
CS
and
OE
are low during this period, I/O pins are in the output state. Then, the data input
signals of opposite phase to the outputs must not be applied to them.
5. If the
CS
low transition occurs simultaneously with the
WE
low transition or after the
WE
transition,
output remains a high impedance state.
6. t
AS
is measured from the latest address transition to the later of
CS
or
WE
going low.
7. t
WR
is measured from the earlier of
CS
or
WE
going high to the first address transition.
8. A write occurs during the overlap of a low
CS
and a low
WE
. A write begins at the latest transition
among
CS
going low and
WE
going low. A write ends at the earliest transition among
CS
going
high and
WE
going high. t
WP
is measured from the beginnig of write to the end of write.
9. t
CW
is measured from the later of
CS
going low to the the end of write.
—
6
—
7
ns
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM628511HCJP-10 | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk |
| HM628511HC | 4M High Speed SRAM (512-kword x 8-bit) |
| HM628511HI | 4M High Speed SRAM (512-kword x 8-bit) |
| HM628512ALRRI-8 | 524288-word x 8-bit High Speed CMOS Static RAM |
| HM628512ALTTI | 524288-word x 8-bit High Speed CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM628511HCLJP-12 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Instructions for Using SRAM Devices Technical Update/Device |
| HM628511HI | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit) |
| HM628511HJP-10 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit) |
| HM628511HJP-12 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:4M High Speed SRAM (512-kword x 8-bit) |
| HM628511HJP-15 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 15ns 36-Pin SOJ |
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