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參數(shù)資料
| 型號： | HM62G36128 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 4M Synchronous Fast Static RAM (128k-words ×36-bits)(4M同步快速靜態(tài)RAM(128k字 ×36位)) |
| 中文描述： | 4分同步快速靜態(tài)存儲器（128K的，字× 36位）（4分同步快速靜態(tài)隨機(jī)存儲器（128K的字× 36位）） |
| 文件頁數(shù)： | 6/23頁 |
| 文件大?。?/td> | 206K |
| 代理商： | HM62G36128 |
HM62G36128 Series
6
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Input Voltage on any pin
V
IN
V
DD
V
DDQ
T
OPR
T
STG
I
OUT
I
LI
θ
JC
θ
JB
-0.5 to V
DDQ
+0.5
-0.5 to 3.9
V
1, 4
Core Supply voltage
V
1
Output Supply Voltage
-0.5 to 2.2
V
1, 4
Operating Temperature
0 to 70
°
C
°
C
Storage Temperature
-55 to 125
Output Short–Circuit Current
25
mA
Latch up Current
200
mA
Package junction to case thermal resistance
2
°
C/W
°
C/W
5,7
Package junction to ball thermal resistance
Notes: 1. All voltage are referenced to V
SS
.
2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional
operation should be restricted the Operation Conditions. Exposure to higher than recommended
voltages for extended periods of time could affect device reliability.
3. These CMOS memory circuits have been designed to meet the DC and AC specifications shown
in the tables after thermal equilibrium has been established.
4. The following supply voltage application sequence is recommended: V
SS
, V
DD
, V
DDQ
, V
ref
then Vin.
Remember, according to the Absolute Maximum Ratings table, V
DDQ
is not to exceed 3.9V,
whatever the instantaneous value of V
DDQ
.
5.
θ
JC is measured at the center of mold surface in fluorocarbon.(See Fig1.)
6.
θ
JB is measured on the center ball pad after removing the ball in fluorocarbon. (See Fig1.)
7. These thermal resistance value have error of +/- 5
°
C/W.
5
6,7
Fig.1 Definition of measurement
θ
JC
θ
JB
T.C.
Fluorocarbon
T.C.
Fluorocarbon
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