參數(shù)資料
型號: HM62Y16258BLTT-10SL
英文描述: x16 SRAM
中文描述: x16的SRAM
文件頁數(shù): 6/17頁
文件大小: 75K
代理商: HM62Y16258BLTT-10SL
HM62Y16258B Series
6
DC Characteristics
Parameter
Symbol Min
Typ*
1
Max
Unit
Test conditions
Input leakage current
|I
LI
|
|I
LO
|
1
μ
A
μ
A
Vin = V
SS
to V
CC
CS
= V
IH
or
OE
= V
or
WE
= V
IL
or,
L B
=
UB
=V
IH
, V
I/O
= V
SS
to V
CC
CS
= V
IL
, Others = V
IH
/V
IL
, I
I/O
= 0 mA
Min. cycle, duty = 100%,
I
I/O
= 0 mA,
CS
= V
IL
, Others = V
IH
/V
IL
Output leakage current
1
Operating current
I
CC
I
CC1
2
mA
Average
operating
current
HM62Y16258B-8
30
mA
HM62Y16258B-10 I
CC1
30
mA
I
CC2
2.5
5
mA
Cycle time = 1
μ
s, duty = 100%,
I
I/O
= 0 mA,
CS
0.2 V,
V
IH
V
CC
– 0.2 V, V
IL
0.2 V
CS
= V
IH
0 V
Vin
CS
V
CC
– 0.2 V
Standby current
I
SB
I
SB1
*
2
0.3
mA
Standby current
0.5
20
μ
A
I
SB1
*
3
V
OH
0.5
10
μ
A
Output high voltage
2.0
V
I
OH
= –0.5 mA
I
OH
= –100
μ
A
I
OL
= 0.5 mA
I
OL
= 100
μ
A
V
CC
– 0.2—
V
Output low voltage
V
OL
0.4
V
0.2
V
Notes: 1. Typical values are at V
CC
= 2.5 V, Ta = +25
°
C and not guaranteed.
2. This characteristic is guaranteed only for L-version.
3. This characteristic is guaranteed only for L-SL version.
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
8
pF
Vin = 0 V
1
Input/output capacitance
Note:
1. This parameter is sampled and not 100% tested.
C
I/O
10
pF
V
I/O
= 0 V
1
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