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參數(shù)資料
| 型號(hào)： | HMC770LP4BE |
| 廠商： | HITTITE MICROWAVE CORP |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-20 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大?。?/td> | 1479K |
| 代理商： | HMC770LP4BE |
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC770LP4BE
v01.0310
Functional Diagram
Electrical Specifications, T
A = +25° C, Vdd = Vdd1 = Vdd2 = +5V, Rbias = R1 = 200 Ω
[2]
The Hmc770lp4Be is ideal for:
cellular / pcs / 3G
fixed Wireless & WlAn
cATv, cable modem & DBs
microwave radio & Test equipment
if & rf Applications
High output ip3: +40 dBm
single positive supply: +5v
low noise figure: 2.5 dB [1]
Differential rf i/o’s
20 lead 4x4 mm smT package: 16mm
The Hmc770lp4Be is a GaAs pHemT Differential
Gain Block mmic amplifier covering 40 mHz to 1
GHz and packaged in a 4x4 mm plastic Qfn smT
package. This versatile amplifier can be used as a
cascadable if or rf gain stage in both 50 ohm and
75 ohm applications. The Hmc770lp4Be delivers
16 dB gain, and +40 dBm output, with only 2.5 dB
noise figure. Differential i/os make this amplifier ideal
for transimpedance and sAW filter applications, and
in transceivers where the if path must be handled
differentially
for
improved
noise
performance.
evaluation pcBs are all available with either smA
(50Ω) or Type f (75Ω) connectors.
parameter
min.
Typ.
max.
min.
Typ.
max.
Units
Zo = 50 ohms
Zo =75 ohms
frequency range
0.04 - 1
GHz
Gain [2]
12
16.5
12
16
dB
Gain variation over Temperature
0.006
0.008
dB / °c
input return loss
17
15
dB
output return loss
18
15
dB
output power for 1 dB compression (p1dB)
20
23
21
23.5
dBm
output Third order intercept (ip3)
(pout = 0 dBm per tone, 1 mHz spacing)
40
37.5
dBm
noise figure [2]
2.5
4
2.75
4
dB
Transimpedance
-
700
ohms
input referred current noise [3]
-
6
pA / √Hz
supply current 1 (idd1)
136
160
136
160
mA
supply current 2 (idd2)
134
160
134
160
mA
[1] 1:1 Balun losses have noT been removed from measurements. see list of materials for eval pcB for the type of balun.
[2] see application circuit
[3] includes balun loss, no photo diode. see list of materials for eval pcB for the type of balun.
Typical Applications
Features
General Description
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
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| HMC770LP4BE_10 | 制造商:HITTITE 制造商全稱(chēng):Hittite Microwave Corporation 功能描述:GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz |
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