參數資料
型號: HMC770LP4BE
廠商: HITTITE MICROWAVE CORP
元件分類: 放大器
英文描述: 40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 4 X 4 MM, ROHS COMPLIANT, PLASTIC, SMT, QFN-20
文件頁數: 7/14頁
文件大小: 1479K
代理商: HMC770LP4BE
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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8 - 2
HMC770LP4BE
v01.0310
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
Gain & Return Loss [1]
50 Ohm Data
Return Loss vs. Temperature [1]
Gain vs. Temperature [1]
Return Loss vs. Vdd [1]
-30
-20
-10
0
10
20
0
0.2
0.4
0.6
0.8
1
S21
S11
S22
FREQUENCY (GHz)
R
E
S
P
O
N
S
E
(d
B
)
-30
-25
-20
-15
-10
-5
0
0.2
0.4
0.6
0.8
1
+25C
+85C
-40C
FREQUENCY (GHz)
R
E
T
U
R
N
LO
S
(d
B
)
S11
S22
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
+25C
+85C
-40C
FREQUENCY (GHz)
G
A
IN
(d
B
)
-30
-25
-20
-15
-10
-5
0
0.2
0.4
0.6
0.8
1
4.5V
5.0V
5.5V
FREQUENCY (GHz)
R
E
T
U
R
N
LO
S
(d
B
)
S22
S11
Gain vs. Vdd [1]
Gain vs. Rbias
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
4.5V
5.0V
5.5V
FREQUENCY (GHz)
G
A
IN
(d
B
)
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
FREQUENCY (GHz)
G
A
IN
(d
B
)
[1] rbias=r1=200 ohms. see application circuit
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